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Low-temperature bonding technologies for MEMS and 3D-IC

: Taklo, M.M.V.; Schjolberg-Henriksen, K.; Malik, N.; Tofteberg, H.R.; Poppe, E.; Vella, D.O.; Borg, J.; Attard, A.; Hajdarevic, Z.; Klumpp, A.; Ramm, P.


Suga, T. ; Institute of Electrical and Electronics Engineers -IEEE-; IEEE Components, Packaging, and Manufacturing Technology Society:
4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014. Proceedings : 15-16 July 2014, Tokyo, Japan
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-5260-1
ISBN: 978-1-4799-5261-8
ISBN: 978-1-4799-5262-5
International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) <4, 2014, Tokyo>
Fraunhofer EMFT ()

Recent developments within MEMS and IC call for a reduction in bonding temperature down to 350 °C and below. For MEMS, sensitive mechanical structures, thinned wafers, and heterogeneous integration of temperature-sensitive materials or materials with dissimilar temperature responses are main driving forces. For 3D-ICs, transistors' sensitivity to stress, and stress-induced failures in fragile dielectric layers are important motivations. The ongoing research on low-temperature bonding in the fields of MEMS and 3D-IC integration are partly overlapping. Therefore, extended knowledge exchange can be of mutual benefit, and will be attempted in this invited talk.