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Mask-induced best-focus-shifts in DUV and EUV lithography

: Erdmann, A.; Evanschitzky, P.; Neumann, J.T.; Gräupner, P.


Lai, K. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Optical microlithography XXVIII : 24 - 26 February 2015, San Jose, California, United States
Bellingham, WA: SPIE, 2015 (Proceedings of SPIE 9426)
ISBN: 978-1-62841-528-5
Paper 94260H, 11 S.
Conference "Optical Microlithography" <28, 2015, San Jose/Calif.>
Fraunhofer IISB ()

The mask plays a significant role as an active optical element in lithography, for both EUV and immersion lithography. Mask-induced and feature dependent shifts of the best focus position and other aberration-like effects were reported both for deep ultraviolet (DUV) immersion and for EUV lithography. We employ rigorous computation of light diffraction from lithographic masks in combination with aerial image simulation to study the root causes of these effects and their dependencies from mask and optical system parameters. Special emphasis is put on the comparison of transmission masks for DUV lithography and reflective masks for EUV lithography, respectively.