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Wafer-level decoration of carbon nanotubes in field-effect transistor geometry with preformed gold nanoparticles using a microfluidic approach

: Blaudeck, T.; Adner, D.; Hermann, S.; Lang, H.; Gessner, T.; Schulz, S.E.


Microelectronic engineering 137 (2015), S.135-140
ISSN: 0167-9317
Workshop on "Materials for Advanced Metallization" (MAM) <23, 2014, Chemnitz>
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer ENAS ()

A scalable on-chip functionalization approach for single-walled carbon nanotubes (SWCNTs) between palladium electrodes in the geometry of a field-effect transistor with preformed metallic nanoparticles is reported. This method is wafer-level compatible and comprises two stage of flow chemistry: a side-wall functionalization of as-deposited SWCNTs with long-chained ethylene glycol units and a microfluidic deposition of the nanoparticles. The scalability of our approach is achieved by using a microfluidic tool in contact with the silicon wafer (diameter 150 mm), operated on a controlled heating stage with a temperature range up to 160 °C and at flow rates of up to 200 μL/s. We verify an effective and controllable deposition of gold nanoparticles (diameters 8.4 ± 2.2 nm), retaining the electronic properties of the CNT field-effect transistors on the wafer.