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CMP process development for Cobalt liner integration at the 28-nm-node

: Koch, J.; Bott, S.; Wislicenus, M.; Krause, R.; Gerlich, L.; Uhlig, B.; Liske, R.; Vasilev, B.; Preusse, A.


Institute of Electrical and Electronics Engineers -IEEE-:
ICPT 2014, 11th International Conference on Planarization/CMP Technology. Proceedings : November 19-21, 2014; Kobe, Japan
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-5557-2
ISBN: 978-1-4799-5557-2
International Conference on Planarization/CMP Technology (ICPT) <11, 2014, Kobe>
Fraunhofer IPMS ()

Advanced liner materials are crucial for optimizing and further shrinking of integrated circuits' interconnects. For next generation devices there is a focus on Cobalt (Co) and Ruthenium (Ru) [1]. Besides the challenges to deposit such materials, new chemical-mechanical polishing (CMP) process compatibility is needed. Especially Co introduces a bunch of new requirements. To reach the advantages of improved step coverage and lowered electrical resistivity compared to Tantalum nitride (TaN) [2] a complete change in consumables is needed to prevent Co from corrosion. Different CMP consumables are tested in a newly established 28 nm Co integration flow with special focus on corrosion properties and electrical performance. Starting from a standard TaN/Ta barrier process the corresponding consumables are systematically changed from non- Co compatible to Co compatible alternatives. Eventually the polishing steps are tuned to meet the integration requirements.