Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Characterization and application of 600 V normally-off GaN transistors in hard switching DC/DC converters

: Heckel, T.; Frey, L.; Zeltner, S.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
IEEE 26th International Symposium on Power Semiconductor Devices & IC's, ISPSD 2014 : Waikoloa, Hawaii, USA, 15 - 19 June 2014
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-2917-7 (Print)
ISBN: 978-1-4799-2919-1
ISBN: 978-1-4799-2918-4
International Symposium on Power Semiconductor Devices & IC's (ISPSD) <26, 2014, Waikoloa/Hawaii>
Fraunhofer IISB ()

As GaN power devices emerge from research to industry, the characterization of these novel devices itself and its application in power electronic converters is essential. The purpose of this paper is to prove the capabilities of GaN technology using a novel 600 V normally-off GaN-on-Si transistor which shows no dynamic behavior of its on-resistance. A hard switching DC/DC converter prototype reveals efficiencies up to 99.3 % and switching frequencies up to 1 MHz incorporating a high power density up to 28 kW/l.