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Design and evaluation of realizable and compact low-impedance transmission lines for two top-metal-layer semiconductor processes

: Pahl, P.; Diebold, S.; Krause, S.; Gulan, H.; Pauli, M.; Massler, H.; Leuther, A.; Kallfass, I.; Zwick, T.

Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society; Institute of Electronics, Information and Communication Engineers -IEICE-, Communications Society:
Asia-Pacific Microwave Conference, APMC 2014. Vol.1 : November 4-7, 2014, Sendai, Japan
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-6055-2
ISBN: 978-4-9023-3931-4
Asia-Pacific Microwave Conference (APMC) <2014, Sendai>
Fraunhofer IAF ()

This paper compares three different narrow 12.5Ω lines regarding their insertion loss. All three lines are realizable on a two top-metal-layer semiconductor process. It turns out that an artificial LC/ telegrapher line, composed of high and low impedance line elements, has the lowest loss of all three presented lines. The investigation, which is based on EM simulations is verified by S-Parameter measurements of all three lines up to 325 GHz. For a length of 315 µm the LC line shows an insertion loss of 2.5 dB@200 GHz.