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Thermo-mechanical simulation of sintered Ag die attach for high temperature applications

: Moreira de Sousa, Micaela; Dijk, Marius van; Walter, Hans; Weber, Constanze; Hutter, Matthias; Oppermann, Hermann; Wittler, Olaf; Lang, Klaus-Dieter

International Microelectronics and Packaging Society -IMAPS-:
International Conference and Exhibition on High Temperature Electronics, HiTEC 2014 : Albuquerque, New Mexico, USA, 13 - 15 May 2014
Red Hook, NY: Curran, 2014
ISBN: 978-1-63439-115-3
International Conference and Exhibition on High Temperature Electronics (HiTEC) <2014, Albuquerque/NM>
Fraunhofer IZM ()

Diverse electronic packages operate under exceptionally harsh environments, which require extended lifetimes, presenting a significant challenge for the microelectronics community. Operating temperatures above 200oC together with high pressures, vibrations and potentially corrosive environments implies that some technical issues regarding the development of electronic systems that will operate at such high temperature remain. Recent technology has been emerging for high temperature applications, capable of withstanding up to 300°C. Sintered Ag is one potential candidate for die attachment for extreme environments. The present work aims to develop understanding of how and why attach materials for Si dies degrade/fail under harsh environments by investigating sintered Ag material. A 2D axis-symmetric die attach model, commonly used to represent microelectronic package assemblies, was developed. The FE model provided a good understanding of the effect of single parameter variation of different leadframe materials, sintered Ag and chip thicknesses. The effect of the sintered Ag thickness on the plastic strain was very little. Furthermore, on the chip side, the local thermal mismatch between the Si die and the sintered Ag was the most important loading factor. Also, thicker chips generated higher stresses in the die.