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Reliability of monolithic RC-snubbers in MOS-based power modules

: Erlbacher, T.; Schwarzmann, H.; Krach, F.; Bauer, A.J.; Berberich, S.E.; Kasko, I.; Frey, L.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Components, Packaging, and Manufacturing Technology Society:
ESTC 2014, Electronics System Integration Technology Conference : Helsinki, Finland; 16.09. - 18.09.2014
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-4026-4
ISBN: 978-1-4799-4027-1
ISBN: 978-1-4799-4025-7
Electronics System Integration Technology Conference (ESTC) <5, 2014, Helsinki>
Fraunhofer IISB ()

The reliability of monolithic integrated 200 V RC-snubbers in silicon is investigated both on wafer and module level. The wafer level measurements indicate that the capacitor dielectric is capable of repetitively withstanding 200 V pulses with a continuous use voltage of 150 V for 46 years with a failure rate of 1 ppm. Potentially early failing devices can be identified on wafer level by a screening test. The RC-snubbers exhibit excellent stability to high temperature and high humidity high temperature based stress tests and to thermal cycling. This makes these devices a promising alternative to discrete surface mounted devices in RC snubber applications for modules in power electronic applications.