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Defect detection in through silicon vias by GHz scanning acoustic microscopy: Key ultrasonic characteristics

: Phommahaxay, A.; Wolf, I. de; Djuric, T.; Hoffrogge, P.; Brand, S.; Czurratis, P.; Philipsen, H.; Beyer, G.; Struyf, H.; Beyne, E.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 64th Electronic Components and Technology Conference, ECTC 2014 : 27-30 May 2014, Orlando, Florida, USA
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-2406-6
ISBN: 978-1-4799-2407-3
ISBN: 978-1-4799-2408-0
ISBN: 978-1-4799-2407-3
Electronic Components and Technology Conference (ECTC) <64, 2014, Orlando/Fla.>
Fraunhofer IWM ( IMWS) ()

Among the technological developments pushed by the emergence of 3D-ICs, Through Silicon Via (TSV) technology has become a standard element in device processing over the past years. As volume increases, defect detection in the overall TSV formation sequence is becoming a major element of focus nowadays. Robust methods for in-line void detection during TSV processing are therefore needed especially for scaled down dimensions. Within this framework, the current contribution describes the application field of GHz Scanning Acoustic Microscopy (SAM) to TSV void detection.