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Design of GaN tri-gate HEMTs

: Alsharef, M.; Granzner, R.; Ture, E.; Quay, R.; Racko, J.; Breza, J.; Schwierz, F.


Breza, J. ; Institute of Electrical and Electronics Engineers -IEEE-; Slovak University of Technology -STU-, Faculty of Electrical Engineering and Information Technology, Bratislava:
10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014. Conference Proceedings : Smolenice Castle, Slovakia, 20 - 22 October 2014
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-5476-6
ISBN: 978-1-4799-5474-2 (Print)
ISBN: 978-1-4799-5475-9
International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) <10, 2014, Smolenice>
Fraunhofer IAF ()

The operation of GaN tri-gate HEMTs is investigated by numerical device simulations. It is shown that the threshold voltage of such structures strongly depends on the width of the AlGaN/GaN body and to a lesser extent on the body height. The body height becomes more important as the gate length is reduced. However, the beneficial effect of the side gates saturates at body heights around 100nm, independent of the gate length.