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High quality and high speed cutting of 4H-SiC JFET wafers including PCM structures by using thermal laser separation

: Lewke, D.; Koitzsch, M.; Dohnke, K.O.; Schellenberger, M.; Zuehlke, H.-U.; Rupp, R.; Pfitzner, L.; Ryssel, H.


Zhao, F. ; Materials Research Society -MRS-:
Silicon carbide - materials, processing and devices : April 21 - 25, 2014, San Francisco, California, USA; 2014 MRS spring meeting; Symposium DD - Silicon Carbide-Materials, Processing and Devices
Red Hook, NY: Curran, 2014 (MRS symposium proceedings 1693)
ISBN: 978-1-5108-0552-1
Materials Research Society (Spring Meeting) <2014, San Francisco/Calif.>
Symposium DD "Silicon Carbide-Materials, Processing and Devices" <2014, San Francisco/Calif.>
Fraunhofer IISB ()

The silicon carbide (SiC) market is gaining momentum hence productivity in device manufacturing has to be improved. The current transition from 100 mm SiC-wafers to 150 mm SiC-wafers requires novel processes in the front-end as well as the back-end of SiC-chip production. Dicing of fully processed SiC-wafers is becoming a bottleneck process since current state-of-the-art mechanical blade dicing faces heavy tool wear and achieves low throughput due to low feed rates in the range of only a few mm/s. This paper presents latest results of the novel dicing technology Thermal Laser Separation (TLS) applied for separating SiC-JFETs. We demonstrate for the first time that TLS is capable of dicing fully processed 4H-SiC wafers, including back side metal layer stacks, process control monitoring (PCM), and metal structures inside the dicing streets with feed rates up to 200 mm/s. TLS thus paves the way to efficient dicing of 150 mm SiC-wafers. Copyright