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Modification of polypropylene films for thin film capacitors by ion implantation

: Häublein, V.; Birnbaum, E.; Ryssel, H.; Frey, L.; Grimm, W.


Institute of Electrical and Electronics Engineers -IEEE-:
20th International Conference on Ion Implantation Technology, IIT 2014. Proceedings : June 26 - July 4, 2014, Portland, Oregon
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-5213-7
ISBN: 978-1-4799-5212-0
4 S.
International Conference on Ion Implantation Technology (IIT) <20, 2014, Portland/Or.>
Fraunhofer IISB ()

Polypropylene (PP) films for thin film capacitors were implanted with N, Ar, and Ne, respectively, in order to reduce the water vapor permeability. It is shown that the reduction of the water vapor permeability strongly depends on implantation dose and energy. For doses below 1015 cm-2, the water vapor permeability was not affected, while doses above 1015 cm-2 lead to a significant reduction. For all of the mentioned elements, 10 keV implants lead to a significantly greater reduction than 20 keV implants. The largest reduction of about 96 % was achieved by Ar implantation at 10 keV and a dose of 1015 cm-2. Besides the water vapor permeability analysis, surface analysis, tensile tests, and electric strength measurements of implanted and nonimplanted films were performed and are discussed in the paper.