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Passivation of different black silicon surfaces by ALD deposited Al 2O3

: Otto, M.; Kroll, M.; Kasebier, T.; Li, X.; Gesemann, B.; Fuchsel, K.; Ziegler, J.; Sprafke, A.N.; Wehrspohn, R.B.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society; Institute of Electrical and Electronics Engineers -IEEE-, Power & Energy Society -PES-:
39th IEEE Photovoltaic Specialists Conference, PVSC 2013 : Tampa, Florida, USA, 16.06.2013-21.06.2013
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4799-3299-3
Photovoltaic Specialists Conference (PVSC) <39, 2013, Tampa/Fla.>
Fraunhofer IOF ()

Optical properties of black silicon (b-Si) can be tailored to minimize reflection losses to less than 0.6 % between 300-1000 nm and to improve the absorption at the silicon band-edge by light-trapping. Recently, metal assisted wet-chemically etched (MACE) b-Si was exploited to fabricate high efficiency (18.2 %) solar cells with surface passivation by thermal SiO2 and recombination velocities (SRV) of 100 cm/s [1]. We compare surface passivation performance of ALD-Al2O3 on different dry and wet etched nanostructures. SRVs 8 cm/s on bifacially black 1 cm p-type Si FZ wafers were measured. This technological advance will enable higher efficiencies for various PV-cell concepts.