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Opto-electronic properties of different black silicon structures passivated by thermal ALD deposited Al2O3

 
: Otto, M.; Kroll, M.; Käsebier, T.; Li, X.; Gesemann, B.; Füchsel, K.; Ziegler, J.; Sprafke, A.; Wehrspohn, R.B.

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Optical Society of America -OSA-, Washington/D.C.:
Optical Nanostructures and Advanced Materials for Photovoltaics : Tucson, Arizona United States, November 3-7, 2013
Washington, DC: OSA, 2013
ISBN: 978-1-55752-986-2
Paper PM1C.3
Conference "Optical Nanostructures and Advanced Materials for Photovoltaics" <2013, Tucson/Ariz.>
Renewable Energy and the Environment Congress <2013, Tucson/Ariz.>
Englisch
Konferenzbeitrag
Fraunhofer IWM ()

Abstract
Black silicon (b-Si) structures offer improved light absorption but require appropiate surface passivation for photovoltaic applications. Here, we compare the opto-electronic performance of different wet and dry etched b-Si structures passivated by thermal ALD deposited Al2O3.

: http://publica.fraunhofer.de/dokumente/N-350732.html