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Effect of index-antiguiding on the threshold of GaN-based narrow ridge-waveguide laser diodes

: Redaelli, L.; Wenzel, H.; Weig, T.; Lükens, G.; Einfeldt, S.; Schwarz, U.T.; Kneissl, M.; Tränkle, G.


Optical Society of America -OSA-, Washington/D.C.:
CLEO: Science and Innovations : Part of Conference on Lasers and Electro-Optics ; 9 - 14 May 2013, San Jose, California, United States
Washington, DC: OSA, 2013 (OSA technical digest series)
ISBN: 978-1-55752-972-5
Paper CF1F.3
Quantum Electronics and Laser Science - Fundamental Science Conference (QELS) <2013, San Jose/Calif.>
Fraunhofer IAF ()

The effect of index antiguiding on GaN-based blue and violet laser diodes has been investigated. Strong antiguiding effects are proposed to be responsible for the large dependence of the threshold current density on the ridge etch depth.