Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

GaSb-based 2-3 µm semiconductor disk lasers: Versatile lasers for high-power and narrow linewidth emission

: Rattunde, Marcel; Kaspar, S.; Töpper, T.; Manz, Christian; Köhler, Klaus; Wagner, Joachim


Optical Society of America -OSA-, Washington/D.C.:
Advanced Solid-State Photonics, ASSP 2012. CD-ROM : 29 January - 1 February 2012, Rancho Bernardo Inn, San Diego, California, United States
Washington, DC: OSA, 2012 (OSA Technical digest series)
ISBN: 978-1-55752-933-6
Paper AM5A.4, 3 S.
Topical Meeting on Advanced Solid-State Photonics (ASSP) <2012, San Diego/Calif.>
Fraunhofer IAF ()

Highly efficient GaSb-based semiconductor disk lasers operating in the 1.9-2.8 m range have been realized. They reach output powers up to 10 W in CW operation with a high beam quality. By using wavelength selective intracavity elements, tunable single-frequency emission was achieved with a heterodyne linewidth below 100 kHz (< 1.3 fm) at 1 W CW output power.