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Double-sided diffractive photo-mask for sub-500nm resolution proximity i-line mask-aligner lithography

: Bourgin, Yannick; Siefke, Thomas; Käsebier, Thomas; Kley, Ernst-Bernhard; Zeitner, Uwe D.


Lai, K. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Optical microlithography XXVIII : 24 - 26 February 2015, San Jose, California, United States
Bellingham, WA: SPIE, 2015 (Proceedings of SPIE 9426)
ISBN: 978-1-62841-528-5
Paper 94260E, 9 S.
Conference "Optical Microlithography" <28, 2015, San Jose/Calif.>
Fraunhofer IOF ()

Diffractive mask-aligner lithography is capable to print structures that have a sub-500-nanometer resolution by using non-contact mode. This requires the use of specially designed phase-masks and dedicated illumination conditions in the Mask-Aligner to obtain the optimal exposure conditions, a spectral filter and a polarizer needs to be placed in the beam path. We introduce here mask designs that includes a polarizer on the top side of a photo-mask and a diffractive element on the bottom one. This enables printing of high resolution structures of arbitrary orientation by using a classical mask-aligner in proximity exposure mode.