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Tuning the reactive magnetron sputtering process of Al-doped ZnO on large area substrates for amorphous and microcrystalline silicon solar cells

: Sittinger, V.; Ruske, F.; Werner, W.; Szyszka, B.; Rech, B.; Schöpe, G.; Hüpkes, J.

20th European Photovoltaic Solar Energy Conference 2005. Proceedings : Barcelona, 6-10 June 2005
München: WIP-Renewable Energies, 2005
ISBN: 3-936338-19-1
European Photovoltaic Solar Energy Conference <20, 2005, Barcelona>
Fraunhofer IST ()
ZnO; sputtering; a-Si

Throughout the last years strong efforts have been made to develop Al-doped ZnO films on glass as a transparent and conductive front electrode for amorphous or amorphous/microcrystalline thin film silicon solar cells. Compared to the well known SnO2:F films deposited by CVD, the ZnO:Al tchnology allows for better performance at low cost especially because ZnO:Al can be textured in order to enhance the light scattering into the cell. As a milestone towards industrial scale ZnO:Al production, an optimised process for the reactive sputtering of ZnO:Al has been developed at Fraunofer IST. Tuning of process details, such as substrate pretreatment, target material, deposition temperature and deposition mode, have led to high efficiency cells comparable to reference cells deposited onto ZnO-coated substrates prepared by RF-sputtering.