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A microstrip X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate

Ein Mikrostreifen X-Band AlGaN/GaN Leistungsverstärker MMIC auf s.i. SiC Substrat
 
: Raay, F. van; Quay, R.; Kiefer, R.; Fehrenbach, W.; Bronner, W.; Kuri, M.; Benkhelifa, F.; Massler, H.; Müller, S.; Mikulla, M.; Schlechtweg, M.; Weimann, G.

European Microwave Association:
European Microwave Week 2005. CD-ROM : 35th European Microwave Conference 2005. European Conference on Wireless Technologies 2005. European Gallium Arsenide and other Compound Semiconductors Application Symposium. European Radar Conference
London: Horizon House, 2005
ISBN: 2-9600551-0-1
S.233-236
European Gallium Arsenide and Other Compound Semiconductors Application Symposium (GAAS) <13, 2005, Paris>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
MMIC; power amplifier; Leistungsverstärker; microstrip line; Mikrostreifenleitung; x-Band; Radar; HEMT

Abstract
A two-stage high-power amplifier MMIC was realized with a chip size of 4.5 mm x 3 mm operating between 8 GHz and 10 GHz based on a fully integrated microstrip AlGaN/GaN HEMT technology on s.i. SiC substrate. The MMIC device delivers a maximum pulsed output power of 8.9 W (39.5 dBm) at 8.5 GHz at V(ind DS) = 31 V, 10 % duty cycle, and more than 6 dB gain compression level, and features a linear gain in excess of 20 dB.

: http://publica.fraunhofer.de/dokumente/N-34742.html