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2003
Conference Paper
Titel
Silicon films on ceramic substrates (SOCS)
Titel Supplements
Growth and solar cells
Abstract
In this work, we review the different steps of formation of silicon thin film solar cells on different ceramics, namely mullite, SiSiC and SiN. The p+ silicon seeding layer is obtained by high-temperature CVD followed by zone-melting recrystallization (ZMR) in order to enlarge the grains. The active p doped silicon layer is formed by epitaxy on the recrystallized Si film. The structural and electrical properties of the different layers are presented and the diffusion of contaminants from the ceramic substrates into the silicon film was investigated. Solar cells were prepared on such SOCS structures and their photovoltaic properties were evaluated.