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Texturing of multicrystalline silicon with acidic wet chemical etching and plasma etching

: Schultz, O.; Emanuel, G.; Glunz, S.W.; Willeke, G.P.

Volltext urn:nbn:de:0011-n-345165 (481 KByte PDF)
MD5 Fingerprint: c74c1e5597a7ccdf164a81248ef53e63
Erstellt am: 26.10.2012

Kurokawa, K. ; Institute of Electrical and Electronics Engineers -IEEE-:
3rd World Conference on Photovoltaic Energy Conversion 2003. Proceedings. Vol.B : Joint conference of 13th PV Science & Engineering Conference, 30th IEEE PV Specialists Conference, 18th European PV Solar Energy Conference ; Osaka International Congress Center "Grand Cube", Osaka, Japan, 11 - 18 May 2003
Osaka, 2003
ISBN: 4-9901816-1-1
World Conference on Photovoltaic Energy Conversion (WCPEC) <3, 2003, Osaka>
PV Science and Engineering Conference <13, 2003, Osaka>
PV Specialists Conference <30, 2003, Osaka>
European PV Solar Energy Conference <18, 2003, Osaka>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

We investigated two chemical surface texturing methods suitable for multicrystalline silicon solar cells. Etch pits were defined by lithographically opened masking layers. The etchants we used were an aqueous solution of nitric acid (HNO/sub 3/) and hydrofluoric acid (HF) for the investigation of the wet chemical approach and a parallel plate plasma reactor for dry processing. Weighted reflectance values as low as 12% without any antireflection-coating and 5% with a 105 nm thermal SiO/sub 2/ layer were achieved. The electrical properties are characterised by the determination of the emitter saturation current density. The surfaces were passivated by two different passivation schemes namely SiO/sub 2/ and a SiO/sub 2/-SiN/sub x/ stack. Solar cells on monocrystalline float zone (FZ) and multicrystalline (mc) silicon were processed to investigate the impact of the textured front surface on solar cell performance.