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Synchrotron white-beam x-ray topography analysis of the defect structure of HVPE-GaN substrates

 
: Kirste, L.; Danilewsky, A.N.; Sochacki, T.; Köhler, K.; Zajac, M.; Kucharski, R.; Bockowski, M.; McNally, P.J.

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Jang, S. (Ed.) ; Electrochemical Society -ECS-:
Wide Bandgap Semiconductor Materials and Devices 16 : 227th meeting of The Electrochemical Society, in Chicago, IL; May 24-28, 2015
Pennington, NJ: ECS, 2015 (ECS transactions Vol.66, Nr.1)
ISBN: 978-1-60768-591-3
S.93-106
Conference "Wide Bandgap Semiconductor Materials and Devices" <16, 2015, Chicago/Ill.>
Electrochemical Society (ECS Meeting) <227, 2015, Chicago/Ill.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()

Abstract
The defect structure of HVPE-GaN crystals are examined using synchrotron white-beam X-ray topography (SWXRT) and topography results are interpreted and discussed in comparison to reciprocal lattice point broadening from high resolution X-ray diffraction (HRXRD) measurements. Two as-received commercial HVPE-GaN wafers from two different vendors and one HVPEGaN which was grown on an ammonothermal GaN-seed are investigated in this study. From large-area topography the formation of a cellular defect network is identified for the commercial HVPE-GaN. Large differences in the crystal lattice misorientation deformation (mosaicity) are determined for the different samples by transmission section topography. For the HVPE-GaN grown on an ammonothermal GaN-seed a very low defect density was ascertained. From the contrasts of the topography threading screw-type dislocations and threading mixed-type dislocations were identified. The structure analyses show that the outstanding structural properties of the ammo-nothermal GaN-seed are adopted by the HVPE-GaN.

: http://publica.fraunhofer.de/dokumente/N-345079.html