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Microwave monolithic integrated gallium-nitride switches for low static power reconfigurable switch matrix with passive transparent state for power failure redundancy

 
: Kaleem, S.; Kühn, J.; Quay, R.; Hein, M.A.

Papapolymerou, J. (Ed.) ; Institute of Electrical and Electronics Engineers -IEEE-:
IEEE MTT-S International Microwave Symposium, IMS 2015 : Phoenix, Arizona, USA, 17 - 22 May 2015
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4799-8275-2
ISBN: 978-1-4799-8276-9
S.906-909
International Microwave Symposium (IMS) <2015, Phoenix/Ariz.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
gallium nitride; high electron-mobility transistors; monolithic microwave integrated cicuits; microwave switches; Ka-band downlink; traveling wave; tuned circuits

Abstract
Two types of single-pole single-throw microwave monolithic integrated switches based on 0.25 µm GaN-on-SiC technology are presented. These switches constitute an electronically reconfigurable switch matrix with minimal static power dissipation. In addition, these switches establish passive transparent state of the switch matrix, irrespective of the availability of on-board power supply, without requiring additional components on the carrier substrate. Small-signal on-wafer measurements of normally-open absorptive switch with control voltage V(C) = -5 V demonstrated an insertion loss of (2.4 ± 0.4) dB, an on-to-off isolation of >(=) 60 dB, and a voltage standing wave ratio of 1.44:1 in both transmit and isolation states over the Ka-band downlink 17...22 GHz. The normally-closed reflective switch revealed an insertion loss of ~ 1.5 dB, a voltage standing wave ratio of 1.44:1 and an on-to-off isolation of >(=) 30 dB at VC = -5 V and frequency range 18.2...22.5 GHz.

: http://publica.fraunhofer.de/dokumente/N-345073.html