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High duty-cycle (>= 50%) operation of GaInAs/Al(Ga)AsSb quantum cascade lasers

Funktion von GaInAs/Al(Ga)AsSb Quantenkaskadenlaser mit hohen Betriebszyklen (>= 50%)
: Bronner, W.; Yang, Q.K.; Manz, C.; Kaufel, G.; Mann, C.; Köhler, K.; Wagner, J.


IEEE Lasers and Electro-Optics Society:
18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 : Sydney, Australia, 22 - 28 October 2005
Piscataway, NJ: IEEE Operations Center, 2005
ISBN: 0-7803-9217-5
IEEE Lasers and Electro-Optics Society (LEOS Annual Meeting) <18, 2005, Sydney>
Fraunhofer IAF ()
quantum cascade laser; Quantenkaskadenlaser; GaAsSb; GaAlAsSb; continuous-wave operation; Schwellstrom

Molecular beam epitaxy grown GaInAs/Al(Ga)AsSb heterostructures, offering conduction band offsets (gamma-valley) of >= 1 eV, appear to be the prime candidates for realizing high-performance quantum cascade (QC) lasers with short emission wavelengths. We focus on the development of processing technology to enhance the heat removal from the active region of the lasers by depositing a thick gold layer on both sides of the laser ridge. Due to the improved heat removal devices emitting at around 4.9 µm can be operated at high duty cycle (>= 50%) up to a heat-sink temperature of 130 K.