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2005
Conference Paper
Titel
High gain 110-GHz low noise amplifier MMICs using 120-nm metamorphic HEMTs and coplanar waveguides
Alternative
Rauscharme 110 GHz Verstärker MMICs mit hoher Kleinsignalverstärkung basierend auf Koplanartechnologie und metarmorphen HEMTs mit einer Gatelänge von 120 nm
Abstract
This paper presents the design and performance of 110-GHz low noise amplifier MMICs, based on coplanar technology, and utilizing 120-nm gate-length Metamorphic HEMTs. Thanks to a cascode device, a single-stage amplifier achieves 8-dB small signal gain, with less than 4-dB noise figure at 105 GHz, within a chip size of only 0.725 mm2. The 2- and 3-stage LNAs exhibit small signal gains of more than 15- and 22-dB, respectively over the 100-115 GHz frequency range, with associated measured noise figures of 4.5 dB at 105 GHz; the chip area for these circuits are less than 2- and 3 mm2. To the author's knowledge, these results are amongst the lowest noise figures reported to date for uniplanar amplifier MMICs operating at these frequencies.
Author(s)