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Negative and positive luminescence in midwavelength infrared InAs-GaSb superlattice photodiodes

Negative und positive Lumineszenz in InAs/GaSb Übergitter-Photodioden im mittleren Infrarot
: Hoffmann, D.; Gin, A.; Wei, Y.; Hood, A.; Fuchs, F.; Razeghi, M.


IEEE Journal of Quantum Electronics 41 (2005), Nr.12, S.1474-1479
ISSN: 0018-9197
Fraunhofer IAF ()
electroluminescence; Elektrolumineszenz; minority carrier lifetime; Minoritätsträger-Lebensdauer; shockley-read-hall (SRH)

The quantum efficiency of negative and positive luminescence in binary type-II InAs-GaSb superlattice photodiodes has been investigated in the midinfrared spectral range around the 5-µm wavelength. The negative luminescence efficiency is nearly independent on temperature in the entire range from 220 to 325 K. For infrared diodes with a 2-µm absorbing layer, processed without anti-reflection coating, a negative luminescence efficiency of 45 % is found, indicating very efficient minority carrier extraction. The temperature dependent measurements of the quantum efficiency of the positive luminescence enables for the determination of the capture cross section of the Shockley-Read-Hall centers involved in the competing nonradiative recombination.