Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Photoluminescence study of In-situ rare earth doped PVT-grown SiC single crystals

Photolumineszenz Studie von In-situ mit seltenen Erden dotierten PVT gewachsenen SiC-Einkristallen
 
: Schmitt, H.; Müller, R.; Maier, M.; Winnacker, A.; Wellmann, P.

:

Nipoti, R.:
Silicon carbide and related materials 2004 : ECSCRM 2004 ; proceedings of 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4, 2004, Bologna, Italy
Uetikon-Zürich: Trans Tech Publications, 2005 (Materials Science Forum 483/485)
ISBN: 0-87849-963-6
S.445-448
European Conference on Silicon Carbide and Related Materials (ECSCRM) <5, 2004, Bologna>
Englisch
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer IAF ()
photoluminescence; Photolumineszenz; Erbium; rare earth doping; Dotierung mit seltenen Erden; SiC bulk growth; SiC-Kristallzucht; PVT method; PVT-Methode

Abstract
Several SiC bulk crystals were grown with erbium and ytterbium as doping materials. Erbium contents determined by secondary ion mass spectroscopy (SIMS) ranged from 1.2 (.) 10(14) cm(-3) to 1.04 (.) 10(15) cm(-3), while ytterbium contents were below SIMS detection limit. Photoluminescence (PL) investigations of the characteristic 4f-4f-transition lines revealed a reduced luminescence yield in highly nitrogen and aluminum co-doped samples. Also, samples without intentional co-doping grown on the C-face showed less luminescence intensity than those grown on the Si-face. A stabilizing effect of erbium doping on the 4H polytype was observed.

: http://publica.fraunhofer.de/dokumente/N-34086.html