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Negative luminescence of long-wavelength InAs/GaSb superlattice photodiodes

Negative Lumineszenz von Langwelligen InAs/GaSb Übergitter Photodioden
 
: Hoffmann, D.; Hood, A.; Wei, Y.; Gin, A.; Fuchs, F.; Razeghi, M.

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Applied Physics Letters 87 (2005), Nr.20, Art. 201103, 3 S.
ISSN: 0003-6951
ISSN: 1077-3118
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
InAs/GaSb; superlattice; Übergitter; infrared detector; Infrarot-Photodetektor; radiometric property; Radiometrie; Auger recombination; Auger Rekombination

Abstract
The electrically pumped emission behavior of binary type-II InAs/GaSb superlattice photodiodes has been studied in the spectral range between 8 µm and 13 µm. With a radiometric calibration of the experimental setup, the internal and external quantum efficiency has been determined in the temperature range between 80 K and 300 K for both, the negative and positive luminescence. The negative luminescence efficiency approaches values as high as 35% without antireflection coating. The temperature dependence of the internal quantum efficiency near zero-bias voltage allows for the determination of the electron-hole-electron Auger recombination coefficient of gamma(ind n) = 1 X 10(exp 24) cmb6 s(exp -1).

: http://publica.fraunhofer.de/dokumente/N-34020.html