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Comparison of InP/InGaAs DHBT distributed amplifiers as modulator drivers for 80-Gbit/s operation

Vergleich von verteilten Verstärkern mit InP/InGaAs-DHBTs als Modulatortreiber für 80 Gbit/s
: Schneider, K.; Driad, R.; Makon, R.E.; Massler, H.; Ludwig, M.; Quay, R.; Schlechtweg, M.; Weimann, G.


IEEE transactions on microwave theory and techniques 53 (2005), Nr.11, S.3378-3387
ISSN: 0018-9480
Fraunhofer IAF ()
bipolar transistor amplifier; Bipolar Transistor Verstärker; distributed amplifier; verteilter Verstärker; DAs; driver circuits; Treiberschaltung; heterojunction bipolar transistor; HBT; indium compounds; Indium-Verbindung

This paper compares three single-ended distributed amplifiers (DAs) realized in an in-house InP/InGaAs double heterojunction bipolar transistor technology featuring an f(ind t) and f(ind max) larger than 200 GHz. The amplifiers use five or eight gain cells with cascode configuration and emitter follower buffering. Although the technology is optimized for mixed-signal circuits for 80 Gbit/s and beyond, DA results could be achieved that demonstrate the suitability of this process for the realization of modulator drivers. The results are documented with scattering parameter, eye diagram, and power measurements. This includes amplifiers featuring a 3-dB bandwidth exceeding 80 GHz and a gain of over 10 dB. One of the amplifiers exhibits clear eyes at 80 Gbit/s with a gain of 14.5 dB and a voltage output swing of 2.4 V(ind pp) limited by the available digital input signal. This amplifier delivers an output power of 18 dBm (5.1 (V ind pp)) at 40 GHz and 1-dB compression. Two amplifiers offer a tunable gain peaking, which can be used to optimize circuit performance and to compensate losses in the circuit environment. The results show that, using our InP/InGaAs technology, an integration of high-speed mixed-signal circuits (e.g., multiplexers) and high-power modulator drivers on a single chip is feasible.