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2015
Journal Article
Titel
Low temperature deposition of silicon nitride using Si3Cl8
Abstract
We demonstrate the deposition of SixNy thin films using octachlorotrisilane (Si3Cl8) and ammonia between 300 and 500 degrees C by an atomic layer deposition-like growth mechanism. Although there are chemical vapor deposition growth mechanisms present, which lead to an incomplete saturation, a step coverage >80% in high aspect ratio (>60:1) trenches could be achieved. The deposited films oxidize after contact with ambient air leading to substoichiometric N/Si ratios. Increasing the deposition temperature diminishes this oxidation. At temperatures >390 degrees C a bulk N/Si ratio of similar to 1.3 is achieved. The capacitance-voltage (C-V) measurements of these films yield a k value of similar to 6 and a strong C-V hysteresis indicates significant charge trapping.