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Simulation of AsH3 plasma immersion ion implantation into silicon

Simulation von AsH3 Plasmaimmersionsionenimplantation in Silizium
: Burenkov, Alex; Lorenz, Jürgen; Spiegel, Yohann; Torregrosa, Frank


Institute of Electrical and Electronics Engineers -IEEE-:
20th International Conference on Ion Implantation Technology, IIT 2014. Proceedings : June 26 - July 4, 2014, Portland, Oregon
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-5213-7
ISBN: 978-1-4799-5212-0
4 S.
International Conference on Ion Implantation Technology (IIT) <20, 2014, Portland/Or.>
European Commission EC
Fraunhofer IISB ()
plasma immersion ion implantation; AsH3 plasma; doping profiles; silicon; simulation; SIMS

Plasma immersion ion implantation from AsH3 plasma into (100) crystalline silicon was performed using the PULSION tool of Ion Beam Services. Ultra-shallow arsenic doping profiles with maximum concentrations in excess of 1×1022 cm-3 and penetration depths below 10 nm at a concentration of 1×1018 cm-3 were obtained. Two simulation models were applied to describe the observed arsenic profiles: the one developed by the authors earlier for BF3 plasma and a new one that accounts for the specifics of AsH3 plasma.