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Innovative and water based stripping approach for thick and bulk photoresists

: Rudolph, M.; Schumann, D.; Thrun, X.; Esche, S.; Hohle, C.


Behringer, Uwe F.W. (Ed.) ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
30th European Mask and Lithography Conference 2014 : EMLC 2014, 24-25 June, 2014, Dresden, Germany
Bellingham, WA: SPIE, 2014 (Proceedings of SPIE 9231)
ISBN: 9781628412857
Paper 92310U
European Mask and Lithography Conference (EMLC) <30, 2014, Dresden>
Fraunhofer IPMS ()

The usage of phase fluid based stripping agents to remove photoresists from silicon substrates was studied. Photoresists are required for many silicon based technologies such as MEMS patterning, 3D-Integration or frontend and backend of line semiconductor applications. Although the use of resists is very common, their successful integration often depends on the ability to remove the resist after certain processing steps. On the one hand the resist is changing during subsequent process steps that can cause a thermally activated cross-linking which increases the stripping complexity. Resist removal is also challenging after the formation of a hard polymer surface layer during plasma or implant processes which is called skin or crust. On the other hand the choice of stripping chemistry is often limited due to the presence of functional materials such as metals which can be damaged by aggressive stripping chemistries.