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Degradation mechanism of Al2O3 passivation in nanostructured Si solar cells

: Song, J.W.; Jung, J.Y.; Um, H.D.; Li, X.P.; Park, M.J.; Nam, Y.H.; Shin, S.M.; Park, T.J.; Wehrspohn, R.B.; Lee, J.H.


Advanced materials interfaces 1 (2014), Nr.5, Art. 1400010
ISSN: 2196-7350
Fraunhofer IWM ( IMWS) ()

The degradation mechanism of Al2O3 passivation on nanostructured Si is resolved by separate considerations of interface state density and fixed charge density at the interface of Al2O3/Si. Using the analysis of surface potentials, it is reported for the first time that the positive interface charges seriously deteriorate the field-effect passivation of Al2O3 on a nanostructured surface.