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Development of integrated interconnected crystalline silicon thin film solar cells

 
: Pavlovic, R.; Lindekugel, S.; Janz, S.; Reber, S.

:

Physica status solidi. A 212 (2015), Nr.1, S.36-41
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
European Commission EC
FP7-SECURITY; 256762; R2M-SI
Englisch
Zeitschriftenaufsatz
Fraunhofer ISE ()
Materialien - Solarzellen und Technologie; Silicium-Photovoltaik; Kristalline Silicium-Dünnschichtsolarzellen; silicon; film; interconnection

Abstract
In this work the processing sequence for an integrated interconnection concept for crystalline silicon thin-films (c-Si TF) is introduced. This concept is designed to reduce cost in the production of large-area crystalline silicon thin-film modules. Combining the advantages of classical thin-film and wafer technologies, a soldering-free interconnection of cells in the module is realized. In order to investigate the interconnection concept, a small scale laboratory process was developed and is discussed here. Mini-modules were fabricated using this processing sequence on silicon on insulator (SOI) wafers with epitaxially grown back surface field (BSF) and base layer. Despite a non-optimized metallization sequence an open circuit voltage of over 3V could be achieved for a mini-module consisting of five cells. Mini-modules were also encapsulated without loss in efficiency after encapsulation.

: http://publica.fraunhofer.de/dokumente/N-332086.html