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Analysis and performance of drain bias "in-dependent" class-J power amplifier

: Carrubba, V.

Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society; Institute of Electronics, Information and Communication Engineers -IEICE-, Communications Society:
Asia-Pacific Microwave Conference, APMC 2014. Vol.2 : November 4-7, 2014, Sendai, Japan
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-6055-2
ISBN: 978-4-9023-3931-4
Asia-Pacific Microwave Conference (APMC) <2014, Sendai>
Fraunhofer IAF ()
broadband amplifiers; envelope tracking; gallium compounds; microwave transistors; power amplifiers

This paper presents a broadband high power-efficiency Class-J PA investigation as afunction of drain bias voltage V(DC). The Class-J PA mode concept for which high power-efficiencies are released for the wideband frequency spectrum has been so far investigated for fixed V(DC). In this paper for the first time the Class-J approach has been investigated as a function of the supply drain voltage. The experimental results performed on a 4.8 mm AlGaN/GaN packaged power transistor by using a harmonic active loas-pull system have shown almost constant efficiency as a function of the supply voltage. The load-pull measured results have also been validated through measurements on a broadband Class-J PA prototype. Here, high efficiencies of around 55-65% are delivered in the frequency range 1.8-2.7 GHz as well as for various drain supply voltages between 10 V and 40 V.