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Use of genetic algorithms for the development and optimization of crystal growth processes

 
: Fühner, T.; Jung, T.

:

Lan, C.W.:
Fourth International Workshop on Modeling in Crystal Growth 2003. Proceedings : 4 - 7 November 2003, Kyushu, Japan
Amsterdam: Elsevier, 2004 (Journal of crystal growth 266.2004, Nr.1/3)
S.229-238
International Workshop on Modeling in Crystal Growth (IWMCG) <4, 2003, Kyushu>
Englisch
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer IISB ()
computer simulation; optimization; genetic algorithm; Czochralski method; Bridgman technique

Abstract
This paper demonstrates that the combination of a genetic algorithm (GA) and a thermal modeling tool can be useful and efficient for the development and optimization of crystal growth processes. Results are shown for two typical semiconduct or crystal growth models: VGF-GaAs and Si-Czochralski. The VGF case demonstrates the automatic development of an entire growth process, including optimization of the furnace itself and of the heater temperature settings under various constraints. In the Czochralski model, an optimization of the heat shield configurati on has been conducted in order to demonstrate how the GA can be applied to geometry optimization tasks.

: http://publica.fraunhofer.de/dokumente/N-32683.html