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Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor
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2005
Journal Article
Titel
Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor
Author(s)
Lemberger, M.
Paskaleva, A.
Zurcher, S.
Bauer, A.J.
Frey, L.
Ryssel, H.
Zeitschrift
Microelectronics reliability
Konferenz
Workshop on Dielectrics in Microelectronics (WoDim)
DOI
10.1016/j.microrel.2004.11.040
Language
English
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Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB