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Carrier density imaging as a tool for characterising the electrical activity of defects in pre-processed multicrystalline silicon

: Riepe, S.; Stokkan, G.; Kieliba, T.; Warta, W.

Richter, H.:
Gettering and defect engineering in semiconductor technology, GADEST 2003. Proceedings : 10th International Autumn Meeting "Gettering and Defect Engineering in Semiconductor Technology", Seehotel Zeuthen, State of Brandenburg, Germany September 21-26, 2003
Uetikon-Zürich: Scitec Publications, 2004 (Diffusion and defect data. B, Solid state phenomena 95/96)
ISBN: 3-908450-82-9
International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology (GADEST) <10, 2003, Zeuthen>
Fraunhofer ISE ()

In this work we present Carrier Density Imaging as a tool for the assessment of the recombitation activity of defects in multicrystal line silicon. A model for the excess minority carrier density in areas with homogenously distributed dislocations is developed. The correlation of carrier density images with etch pit density and grain boundary maps allows an assessment of the recombination activity of dislocations and grain boundaries.