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2014
Conference Paper
Titel
Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests
Abstract
The reliability of AlGaN/GaN HEMTs with a gate length of 100 nm suitable for applications up to W-band frequencies has been investigated by on- and off-state DC-stress tests. The extrapolated life time measured using the constant current stress test exceeds 105 h at a base plate temperature of 125°C. Very promising reliability results have also been found for the current step-stress tests even at the highest stress level of a DC power density of 12 W/mm. During off-state step-stress test the drain current exceeds the gate current indicating the onset of a buffer leakage current at drain voltages above the operation voltage.
Author(s)