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Growth of GaN crystals and epilayers from solutions at ambient pressure

 
: Meissner, E.; Sun, G.; Hussy, S.; Birkmann, B.; Friedrich, J.; Müller, G.

Japan Society of Applied Physics -JSAP-:
21st Century COE Joint International Workshop on Bulk Nitrides 2003. Proceedings : June 2 and 3, 2003, Tokyo, Japan
Tokyo: The Institute of Pure and Applied Physics (IPAP), 2004 (IPAP Conference Series 4)
Joint International Workshop on Bulk Nitrides <2003, Tokyo>
Englisch
Konferenzbeitrag
Fraunhofer IISB ()
GaN; low pressure solution growth; III-V semiconductor

: http://publica.fraunhofer.de/dokumente/N-32376.html