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Inverted InP quantum dot light-emitting diodes using low-temperature solution-processed metal-oxide as an electron transport layer

: Jang, I.; Kim, J.; Ippen, C.; Greco, T.; Oh, M.S.; Lee, J.; Kim, W.K.; Wedel, A.; Han, C.J.; Park, S.K.


Japanese journal of applied physics 54 (2015), Nr.2S, Art. 02BC01, 6 S.
ISSN: 0021-4922
ISSN: 1347-4065
Fraunhofer IAP ()

The present work shows the inverted InP quantum dot light-emitting diodes (QD-LEDs) with inorganic metal oxide layers. In the inverted structure of ITO/ZnO/InP QDs/CBP/MoO3/Al, a solgel derived ZnO film was used as an electron transport layer (ETL) and MoO3 was used as a hole injection layer (HIL). In contrary to high annealing temperature (>200 °C) for conventional ZnO films, low temperature annealing (∼150 °C) was performed for solgel derived ZnO film. The performance of the inverted QD-LEDs was efficiently improved by optimization of the annealing time and temperature of ZnO ETL. The current efficiency was significantly improved about 215% by lowering annealing temperature of ZnO ETL.