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Diffusion and segregation model for the annealing of silicon solar cells implanted with phosphorus

Diffusions- und Segregationsmodell für die Ausheilung von mit Phosphor implantierten Silizium-Solarzellen
: Wolf, F. Alexander

Postprint urn:nbn:de:0011-n-3220235 (560 KByte PDF)
MD5 Fingerprint: df09107c42ad908517da2485c3b87f8c
Erstellt am: 28.1.2015

IEEE Journal of Photovoltaics 5 (2015), Nr.1, S.129-136
ISSN: 2156-3381
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IISB ()
annealing; defects; diffusion; implantation; phosphorus; photovoltaics; silicon; solar cell; solar energy

We present a fully calibrated model for the diffusion, segregation, and activation of phosphorus for typical annealing conditions of implanted silicon solar cells. In contrast to existing process simulation software, this model allows the quantitative prediction of doping profile distributions, and, thereby, sheet resistances, surface concentrations, and junction depths. The model also provides an intuitive understanding of the dependence of these quantities on the parameters of the annealing process.