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A hermetic and room-temperature wafer bonding technique based on integrated reactive multilayer systems

: Braeuer, J.; Gessner, T.


Journal of micromechanics and microengineering 24 (2014), Nr.11, Art. 115002, 10 S.
ISSN: 0960-1317
ISSN: 1361-6439
Fraunhofer ENAS ()

This paper focuses on direct deposition and patterning of reactive and nano-scale multilayer films at wafer level. These multilayer structures are called integrated reactive material systems (iRMS). In contrast to the typically used nickel (Ni)/ aluminum (Al) systems, in this work we needed to have our total multilayer film thicknesses smaller than 2.5 µm to reduce stress within the multilayer as well as deposition costs. Thus, we introduced new high energetic iRMS. These films were deposited by using alternating magnetron sputtering from high purity Al- and palladium (Pd)-targets to obtain films with a defined Al:Pd atomic ratio. In this paper, we present the result for reaction characteristics and reaction velocities which were up to 72.5 m s−1 for bond frames with lateral dimensions as low as 20 µm. Furthermore, the feasibility of silicon (Si)–Si, Si–glass as well as Si–ceramic hermetic and metallic wafer bonding at room temperature is presented. We show that by using this bond technology, strong (maximum shear strengths of 235 MPa) and hermetically sealed bond interfaces can be achieved without any additional solder material.