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Hysteresis-free carbon nanotube field-effect transistors without passivation

: Tittmann, J.; Hermann, S.; Schulz, S.E.; Pacheco-Sanchez, A.; Claus, M.; Schröter, M.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Computer Society; Association for Computing Machinery -ACM-:
IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2014. Proceedings : 8-10 July 2014, Paris, France
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-6383-6
ISBN: 978-1-4799-6384-3
International Symposium on Nanoscale Architectures (NANOARCH) <2014, Paris>
Fraunhofer ENAS ()

Back-gated carbon nanotube field-effect transistors have been fabricated using a wafer-level technology. Source and drain electrodes are structured by lift-off and wet etching. AFM measurements reveal residual contaminations originating from structuring processes. We investigate the particle removal by an oxygen plasma treatment depending on the process time. I/V characterization reveals a strong dependency of transistor characteristics, especially hysteresis behavior, on surface cleanliness. We find the removal of residual particles to be much more important than a passivation to keep water molecules from the transistor region. We show hysteresis-free transistor behavior even after 9 weeks of storage in air without passivation.