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Ferroelectric hafnium oxide based materials and devices

Assessment of current status and future prospects
: Müller, Johannes; Polakowski, Patrick; Müller, Stefan; Mikolajick, Thomas

Kurzfassung urn:nbn:de:0011-n-3162053 (107 KByte PDF)
MD5 Fingerprint: 7e8b92fe1649523c9209c7e6de0b9b42
Erstellt am: 13.12.2014

Kar, S. ; Electrochemical Society -ECS-:
Semiconductors, Dielectrics, and Metals for Nanoelectronics 12 : Held in Cancun, Mexico from October 5 to 10, 2014, held during the 226th Meeting of The Electrochemical Society
Pennington, NJ: ECS, 2014 (ECS transactions 64.2014, Nr.8)
ISBN: 978-1-62332-188-8
ISBN: 978-1-60768-545-6
Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics <12, 2014, Cancun>
Electrochemical Society (Meeting) <226, 2014, Cancun>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IPMS ()

Bound to complex perovskite systems, ferroelectric random access memory (FRAM) suffers from limited CMOS-compatibility and faces severe scaling issues in today´s and future technology nodes. Nevertheless, compared to its current-driven non-volatile memory contenders, the field-driven FRAM excels in terms of low voltage operation and power consumption and therewith has managed to claim embedded as well as stand-alone niche markets. However, in order to overcome this restricted field of application, a material innovation is needed. With the ability to engineer ferroelectricity in HfO2, a high-k dielectric well established in memory and logic devices, a new material choice for improved manufacturability and scalability of future 1T and 1T-1C ferroelectric memories has emerged. This paper reviews the recent progress in this emerging field and critically assesses its current and future potential. Moreover, a general understanding of the thin film properties and stabilization mechanism of ferroelectric HfO2 will be given. Suitable memory concepts as well as new applications will be proposed accordingly.