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Empirical model for the effective electron mobility in silicon nanowires

 
: Granzner, R.; Polyakov, V.M.; Schippel, C.; Schwierz, F.

:

IEEE transactions on electron devices 61 (2014), Nr.11, S.3601-3607
ISSN: 0018-9383
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
effective field; empirical model; mobility; MOSFET; phonon scattering; silicon nanowires (SiNWs); surface roughness (SR)

Abstract
An empirical model for the effective electron mobility in silicon nanowires (SiNWs) is presented. The model is based on published mobility data from numerical simulations of electron transport in SiNWs with different cross sections. Both phonon scattering and surface roughness scattering as well as the impact of the effective vertical field are considered. A comparison with a variety of experimental mobility data from the literature shows that the model can be treated as a reference for benchmarking different NW technologies. The effective field dependence is modeled by a simple expression making our mobility model very efficient for the use in numerical device simulators or in analytical MOSFET models.

: http://publica.fraunhofer.de/dokumente/N-315848.html