Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Reverse bias behavior of diffused and screen-printed n-type Cz-Si solar cells

 
: Lohmüller, E.; Fertig, F.; Werner, S.; Geisemeyer, I.; Clement, F.; Biro, D.

:
Postprint urn:nbn:de:0011-n-3154244 (1.6 MByte PDF)
MD5 Fingerprint: 3e8e49ea80ace0fb863b81fe4cddf137
© IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Erstellt am: 17.8.2019


IEEE Journal of Photovoltaics 4 (2014), Nr.6, S.1483-1490
ISSN: 2156-3381
ISSN: 2156-3403
Englisch
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Pilotherstellung von industrienahen Solarzellen; cells; pattern; current; Emitter; depth

Abstract
In this study, we investigate current flow in reverse bias mode and its impact on conversion efficiency for large-area n-type Cz-Si H-pattern and n-type Cz-Si metal wrap through (MWT) solar cells. Shunting is studied as a function of the boron emitter doping profile and by comparing MWT cells with two different phosphorus-doped back surface field (BSF) structures. Less shunting is observed for cells with deeper boron-doped emitters (depth d ≈ 700 nm) compared with cells with shallower emitters (d ≈ 500 nm). Cells with a deeper doping profile have initial shunt resistances of RP > 30 kΩ · cm2 (without prior reverse load), while cells with shallower emitters exhibit initial values of RP ≈ 9 kΩ · cm2, irrespective of the cell type. Furthermore, cells with deeper boron doping profiles show significantly lower current flows under reverse bias. We observe a halving of the RP-values after reverse biasing the H-pattern and the MWT cells with structured BSF where, on the other hand, the conversion efficiencies are hardly affected. MWT cells featuring a BSF below the external p-type contacts show a drop in conversion efficiency of 0.3%abs. This is due to degradation of the electrical insulation between via paste and BSF after reverse bias stress.

: http://publica.fraunhofer.de/dokumente/N-315424.html