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Performance and fabrication of GaN/AlGaN power MMIC at 10 GHz

Eigenschaften und Herstellung von 10 GHz GaN/AlGaN Leistungsverstärker
 
: Benkhelifa, F.; Kiefer, R.; Müller, S.; Raay, F. van; Quay, R.; Sah, R.E.; Dammann, M.; Mikulla, M.; Weimann, G.

CS MANTECH, 20th International Conference on Compound Semiconductor Manufacturing Technology 2005 : New Orleans, Louisiana, April, 11 - 14, 2005
St. Louis: GaAS MANTECH Inc., 2005
ISBN: 1-893580-06-7
S.163-165
International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) <20, 2005, New Orleand/La.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
GaN; HEMT; power amplifier; Leistungsverstärker; MMIC; coplanar technology; Koplanartechnologie

Abstract
High performance and fabrication of a coplanar 2 stage power amplifier based on a GaN/AlGaN HEMT technology on 2-inch SiC substrate has been realized. At 10 GHz the coplanar MMIC delivers a maximum output power of 13.4 W, measured on wafer in pulsed mode, a linear gain of 20 dB and a maximum PAE of 25 % at a V(ind DS) bias of 35 V and compression level of 5 dB. The yield of the MMICs across 2-inch wafer is 65 %.

: http://publica.fraunhofer.de/dokumente/N-31510.html