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Backside process free broadband amplifier MMICs at D-band and H-band in 20 nm mHEMT technology

 
: Merkle, T.; Leuther, A.; Koch, S.; Kallfass, I.; Tessmann, A.; Wagner, S.; Massler, H.; Schlechtweg, M.; Ambacher, O.

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Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC 2014 : 19 - 22 October 2014, La Jolla, California, USA
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-3622-9
4 S.
Compound Semiconductor Integrated Circuit Symposium (CSIC) <36, 2014, La Jolla/Calif.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
metamorphic high electron mobility transistor (mHEMT); monolithic microwave integrated circuit (MMIC); broadband amplifier; millimeter-wave; thin-film microstrip (TFMS); benzocyclobutene (BCB)

Abstract
High gain amplifier MMICs (monolithic microwave integrated circuits) addressing broadband radar and communication applications at the waveguide bands WR-6 (110 - 170 GHz) and WR-3 (220 - 325 GHz) are presented. All circuits are manufactured in the next generation metamorphic high electron mobility transistor (mHEMT) technology featuring 20 nm gate length and a strained 100% InAs channel. The transistors are encapsulated by 0.3 µm and 1.4 mm thick layers of benzocyclobutene (BCB). The 1.4 µm thick BCB layer is used to form shielded thin-film microstrip (TFMS) lines confined at the front-side of the wafer for implementing matching networks. Substrate thinning and backside processing is not required for the function of the amplifiers. The amplifier for WR-6 operates over the whole waveguide band with an average gain of 28 dB. A gain of more than 24 dB was measured for the MMIC from 215 - 290 GHz. All presented MMICs exceed 30% of gain defined bandwidth.

: http://publica.fraunhofer.de/dokumente/N-314818.html