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Sips adsorption model for DNA sensing with AlGaN/GaN high electron mobility transistors

: Espinosa, N.; Schwarz, S.U.; Cimalla, V.; Ambacher, O.


MRS online proceedings library. Online resource 1763 (2014), 6 S.
ISSN: 1946-4274
International Materials Research Congress (IMRC) <23, 2014, Cancun>
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IAF ()

This work presents an adsorption model based on the Sips isotherm for sensing different concentrations of DNA with open gate AlGaN/GaN high electron mobility field effect transistors (HEMTs). Probe-DNA was immobilized on the transistor gate before the application of target- DNA. Concentrations of 10(-15) to 10(-6) mol/L were tested. The sensor has a detection limit of 10(-12) mol/L and saturates after the addition of 10(-8) mol/L target-DNA.